Investigation of structural and electronic properties of GaN Nanosheet |
کد مقاله : 1179-PHYCHEM23 |
نویسندگان |
تارا آشوری * دانشگاه صنعتی خواجه نصیرالدین طوسی |
چکیده مقاله |
We have performed the first-principles calculations on the structural and electronic properties of the 2D GaN nanosheet. In this work, the electronic properties of pristine GaN monolayer have been studied using a first-principles calculation based on DFT. The results unveil that these semiconductor monolayer sheets are promising materials for electrical sensors and due to their tunable bandgap semiconductor on the application of the electric field. |
کلیدواژه ها |
Density functional theory; Two-dimensional Gallium nitride; Electronic properties, structural properties |
وضعیت: پذیرفته شده برای ارسال فایل های ارائه پوستر |